Near-edge X-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films

Materials Research Society Symposium Proceedings

Volumn 437, Issue , 1996, Pages 207-210

  Jankowski, A F ^a   Jimenez, I ^a   Hayes, J P ^a   Shuh, D K ^a   Tong, W M ^a   Sutherland, D G J ^a   Carlisle, J A ^a   Terminello, L J ^a   Himpsel, F J ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; FILMS; SPUTTER DEPOSITION;

BORON NITRIDE FILMS; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE (NEXAFS); REACTIVE SPUTTERING;

CHEMICAL BONDS;

EID: 0030383795     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-437-207     Document Type: Article

References (13)