Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 97-100

  Lammasniemi, J ^a   Tappura, K ^a   Jaakkola, R ^a   Kazantsev, A ^a   Rakennus, K ^a   Uusimaa, P ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TUNNEL DIODES;

GALLIUM INDIUM PHOSPHIDE; TANDEM STRUCTURE; ZINC SELENIDE;

SOLAR CELLS;

EID: 0030383293     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.563956     Document Type: Conference Paper

References (10)