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Journal of Adhesion Science and Technology

Volumn 10, Issue 10, 1996, Pages 1067-1074

Surface characterization of a semiconductor SiGe/Si heterostructure by contact angle measurements

(4) Fadda, E a Warren, P a Chollet, F a Berenguer, M a

a ORANGE LABS (France)

Author keywords

AFM; Characterization; Contact angles; Semiconductor; SiGe alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SURFACE ROUGHNESS; SURFACE TREATMENT; THICKNESS MEASUREMENT; CHARACTERIZATION; GERMANIUM; SILICON;

CONTACT ANGLE MEASUREMENTS; ROOT MEAN SQUARE (RMS) VALUES; STRAINED EPILAYERS;

HETEROJUNCTIONS; ANGLE MEASUREMENT;

AFM; CONTACT-ANGLE MEASUREMENTS; CRITICAL THICKNESS; EPILAYERS GROWN; GROWTH MECHANISMS; MORPHOLOGICAL MODIFICATION; PLANAR INTERFACE; ROOT MEAN SQUARE VALUES; SEMICONDUCTOR; SI-GE ALLOYS; SIGE/SI; SILICON TECHNOLOGIES; STRAINED-SI; SURFACE CHARACTERIZATION; SURFACE EVOLUTION; WATER CONTACT ANGLE;

EID: 0030383092 PISSN: 01694243 EISSN: 15685616 Source Type: Journal
DOI: 10.1163/156856196X00102 Document Type: Article

Times cited : (2)

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