Study of recombination processes in a-Si:H by the temperature dependence of the two carriers phototransport properties

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 777-782

  Lubianiker, Y ^a   Naidis, R ^a   Balberg, I ^a   Fonseca, L ^a   Weisz, S Z ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; GLOW DISCHARGES; QUENCHING; SILANES; TEMPERATURE; THERMAL EFFECTS;

DANGLING BOND; HOT WIRE TECHNIQUE; HYDROGENATED AMORPHOUS SILICON; PHOTOTRANSPORT PROPERTY; THERMAL QUENCHING;

AMORPHOUS SILICON;

EID: 0030383056     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-777     Document Type: Conference Paper

References (14)