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Volumn 420, Issue , 1996, Pages 215-220
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Probe of field collapse in a-Si:H solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CAPACITANCE;
CHARGE CARRIERS;
ELECTRIC FIELD EFFECTS;
ELECTRIC SPACE CHARGE;
ELECTRONIC DENSITY OF STATES;
NUMERICAL METHODS;
OPTICAL PROPERTIES;
PERMITTIVITY;
PROBES;
SEMICONDUCTOR GROWTH;
FIELD COLLAPSE;
HYDROGENATED AMORPHOUS SILICON SOLAR CELLS;
LIGHT INTENSITY;
PHOTOCAPACITANCE;
POISSON EQUATION;
SOLAR CELLS;
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EID: 0030382861
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-420-215 Document Type: Conference Paper |
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Times cited : (5)
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References (7)
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