Metal-ferroelectric-semiconductor field-effect transistor (MFSFET) for single transistor memory by using poly-Si source/drain and BaMgF4 dielectric

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 503-506

  Lyu, Jong Son ^a   Kim, Bo Woo ^a   Kim, Kwang Ho ^a   Cha, Ju Youn ^a   Yoo, Hyung Joun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; FERROELECTRIC MATERIALS; HYSTERESIS; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE; THERMAL CYCLING;

FERROELECTRIC HYSTERESIS MEASUREMENT; METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTOR; POLYSILICON SOURCE; SINGLE TRANSISTOR MEMORY;

MESFET DEVICES;

EID: 0030382699     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)