An investigation of the multicarrier transport properties of δ-doped InSb at high temperatures using a mobility spectrum technique

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1857-1862

  Panaev, I A ^a   Studenikin, S A ^a   Tkachenko, V A ^a   Tkachenko, O A ^a   Heremans, J P ^b   Partin, D L ^b   Morelli, D T ^b   Thrush, C M ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b GENERAL MOTORS CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRUDE APPROXIMATION; FAR INFRARED CYCLOTRON RESONANCE; MOBILITY SPECTRUM (MS) ANALYSIS; QUANTIZED SUBBANDS;

APPROXIMATION THEORY; BAND STRUCTURE; CHARGE CARRIERS; CYCLOTRON RADIATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; THERMAL EFFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030382687     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/016     Document Type: Article

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