Comparison of hydrogen passivation in heteroepitaxial N+P and P+N solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 179-182

  Chatterjee, B ^a   Ringel, S A ^a   Hoffman Jr , R ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; HYDROGEN; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR PLASMAS; SUBSTRATES;

FERMI LEVEL EFFECTS; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA REACTOR;

SOLAR CELLS;

EID: 0030382455     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)