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Volumn 428, Issue , 1996, Pages 201-206
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Microstructure of passivated Al-Cu and Al-Si-Cu conductor lines: Interaction of precipitates, defects and mechanical stresses
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM ALLOYS;
ANNEALING;
COPPER ALLOYS;
ELECTROMIGRATION;
FILM PREPARATION;
PASSIVATION;
PRECIPITATION (CHEMICAL);
REFRACTORY METALS;
THERMAL EFFECTS;
THERMAL STRESS;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
ATOMIC MOBILITY;
SEMICONDUCTING FILMS;
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EID: 0030382159
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-428-201 Document Type: Conference Paper |
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Times cited : (4)
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References (18)
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