Growth and characterization of CuInSe2 epitaxial films for device applications

Materials Research Society Symposium - Proceedings

Volumn 426, Issue , 1996, Pages 233-241

  Niki, S ^a   Kurafuji, T ^a   Fons, P J ^a   Kim, I ^a   Hellman, O ^a   Yamada, A ^a  

^a Ministry of International Trade and Industry   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CRYSTAL LATTICES; EXCITONS; FILM GROWTH; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

COPPER INDIUM DISELENIDE; LATTICE MISMATCH; X RAY INTENSITY AREA MAPPING;

SEMICONDUCTING FILMS;

EID: 0030382105     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-426-233     Document Type: Conference Paper

References (19)