Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1847-1849

  Bolkhovityanov, Yu B ^a   Jaroshevich, A S ^a   Revenko, M A ^a   Scheibler, H E ^a   Terekhov, A S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT HOLE BANDS; VALENCE BAND SPLITTING;

ENERGY GAP; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SHEAR DEFORMATION;

SEMICONDUCTING FILMS;

EID: 0030381953     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/014     Document Type: Article

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