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Volumn 427, Issue , 1996, Pages 159-164
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New technique for ohmic formation
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTRONIC STRUCTURE;
FERMI LEVEL;
HYDROGENATION;
INTERFACES (MATERIALS);
OXIDATION;
PH EFFECTS;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
SOLUTIONS;
OHMIC FORMATION;
OHMIC CONTACTS;
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EID: 0030381819
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-427-159 Document Type: Conference Paper |
Times cited : (1)
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References (10)
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