55% efficiency 5 W PHEMT X-band MMIC high power amplifier

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 111-114

  Wang, R ^a   Cole, M ^a   Hou, L D ^a   Chu, P ^a   Chang, C D ^a   Midford, T A ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; ELECTRIC CURRENTS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

DRAIN CURRENT; DRAIN VOLTAGE; POWER ADDED EFFICIENCY; X BAND FREQUENCIES;

POWER AMPLIFIERS;

EID: 0030380364     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)