Device integration of a 0.35 μm CMOS on shallow SIMOX technology for high-speed and low-power applications

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 116-117

  Adan, A O ^a   Naka, T ^a   Kaneko, S ^a   Urabe, D ^a   Higashi, K ^a   Kagisawa, A ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; ULTRATHIN FILMS; WSI CIRCUITS;

SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

CMOS INTEGRATED CIRCUITS;

EID: 0030380313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)