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Volumn , Issue , 1996, Pages 44-45
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Formation of a bonded SOI interface using a spin-on dielectric
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL DEFECTS;
DIELECTRIC MATERIALS;
GLASS BONDING;
INFRARED IMAGING;
INTERFACES (MATERIALS);
OXIDATION;
OXIDES;
SEMICONDUCTING SILICON;
SILICON WAFERS;
THERMAL EFFECTS;
GLASS REFLOW;
PLANARITY;
SPIN ON DIELECTRIC;
WAFER BONDING;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 0030380305
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (5)
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