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Volumn 436, Issue , 1996, Pages
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Analysis of void nucleation in passivated interconnect lines due to vacancy condensation and interface contamination
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
CALCULATIONS;
CONDENSATION;
CONTAMINATION;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
KINETIC THEORY;
NUCLEATION;
PASSIVATION;
SILICON;
TENSILE PROPERTIES;
THERMODYNAMICS;
ELECTROMIGRATION INDUCED VOIDING;
INTERFACE CONTAMINATION;
PASSIVATED INTERCONNECT LINES;
VACANCY CONDENSATION;
VOID NUCLEATION;
INTERFACES (MATERIALS);
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EID: 0030379823
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-436-405 Document Type: Conference Review |
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Times cited : (2)
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References (22)
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