Novel ultrafast functional device: resonant tunneling high electron mobility transistor

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 1996, Pages 60-63

  Chen, Kevin J ^a   Maezawa, K ^a   Yamamoto, M ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; OHMIC CONTACTS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE; TUNNEL DIODES;

GATE VOLTAGES; NEGATIVE DIFFERENTIAL RESISTANCE; NEGATIVE TRANSCONDUCTANCE; RESONANT TUNNELING HIGH ELECTRON MOBILITY TRANSISTORS; ULTRAFAST FUNCTIONAL DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030379617     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)