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Volumn 420, Issue , 1996, Pages 641-646
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1/f noise and thermal equilibration effects in hot wire deposited amorphous silicon
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL DEFECTS;
ELECTRON TRANSPORT PROPERTIES;
ENERGY GAP;
HYDROGEN;
SPURIOUS SIGNAL NOISE;
THIN FILMS;
AMBIPOLAR DIFFUSION DEPOSITION;
BAND GAP;
DARK CONDUCTIVITY;
DEFECT DYNAMICS;
ELECTRONIC TRANSPORT;
HOT WIRE CHEMICAL VAPOR DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR;
STAEBLER-WRONSKI EFFECT;
THERMAL EQUILIBRATION;
AMORPHOUS SILICON;
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EID: 0030379509
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-420-641 Document Type: Conference Paper |
Times cited : (8)
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References (14)
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