Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 659-664

  Abramov, A S ^a   Kosarev, A I ^a   Roca i Cabarrocas, P ^a   Vinogradov, A J ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; DIFFUSION; ELECTRONS; PHOTOCONDUCTIVITY; REACTION KINETICS;

DYNAMIC INTERFERENCE GRATING; HOLE DIFFUSION; HYDROGENATED AMORPHOUS SILICON; LIGHT SOAKING;

AMORPHOUS SILICON;

EID: 0030379508     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-659     Document Type: Conference Paper

References (7)