Proposal of prediction method for dislocation generation in silicon substrate for semiconductor devices

Zairyo/Journal of the Society of Materials Science, Japan

Volumn 45, Issue 12, 1996, Pages 1322-1327

  Ohta, Hiroyuki ^a   Miura, Hideo ^a   Kitano, Makoto ^a  

^a HITACHI LTD   (Japan)

Author keywords

Dislocation; Glide plane; Silicon; Silicon nitride; Stress singularity parameter

Indexed keywords

DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; STRENGTH OF MATERIALS; STRESS CONCENTRATION; SUBSTRATES; THIN FILMS;

DISLOCATION GENERATION; GLIDE PLANE; STRESS SINGULARITY PARAMETER;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030378883     PISSN: 05145163     EISSN: None     Source Type: Journal    
DOI: 10.2472/jsms.45.1322     Document Type: Article

References (19)

1. H. Miura, N. Saito, H. Ohta, N. Okamoto and H. Masuda, Proc. 5th Int. Conf. Simulation of Semiconductor Devices and Processes, p. 177 (1993).
2. S. Isomae, J. Appl. Phys., 57, 216 (1985).
3. Y. Tamaki, S. Isomae, K. Sagara, T. Kure and M. Kawamura, Solid-State Science and Technology, 135, 726 (1988).
4. S.M. Hu, J. Appl. Phys., 49, 5678 (1978).
5. I. Yonenaga and K. Sumino, Phys. Stat. Sol., A50, 685 (1978).
6. J. R. Patel and A. R. Chaudhuri, J. Appl. Phys., 34, 2788 (1963).
7. K. Minowa and K. Sumino, Phys. Rev. Lett., 69, 320 (1992).
8. K. Sumino and H. Harada, Philos. Mag., A44, 1319 (1981).
9. K. Sumino, H. Harada and I. Yonenaga, Jpn. J. Appl. Phys., 19, L49 (1980).
10. A. K. Sinha, H. J. Levinstein and T. E. Smith, J. Appl. Phys., 49, 2423 (1978).
11. Y. S. Touloukian, "Thermal Properties of Matter", The TPRC Data Series Vol. 13 (1977) IFI/PLENUM.
12. O. H. Nielsen, "Properties of Silicon 1988", EMIS data reviews series No. 4 (1988).
13. D. B. Bogy, Trans. ASME, 1, 377 (1971).