Strain overcompensated GaInP/AlGaInP quantum well laser structures for improved reliability at high output powers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1996, Pages 139-140

  Valster, A ^a   Meney, A T ^a   Downes, J R ^a   Adams, A R ^a   Brouwer, A A ^a   Corbijn, A J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; STRAIN; SUBSTRATES;

BANDGAP SHRINKAGE; CATASTROPIC OPTICAL DAMAGE; COMPRESSIVE STRAIN RELAXATION; STRAIN COMPENSATION; STRAIN OVERCOMPENSATION;

QUANTUM WELL LASERS;

EID: 0030378733     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)