Characterization of electromigration failures using a novel test structure

Materials Research Society Symposium - Proceedings

Volumn 428, Issue , 1996, Pages 81-86

  Gall, Martin ^a   Jawarani, Dharmesh ^a   Kawasaki, Hisao ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER ALLOYS; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MASS TRANSFER; NONDESTRUCTIVE EXAMINATION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSPORT PROPERTIES; VLSI CIRCUITS;

INCUBATION TIME; ON CHIP INTERCONNECT STRUCTURE; TUNGSTEN PLUG CONTACT;

ELECTROMIGRATION;

EID: 0030378525     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-428-81     Document Type: Conference Paper

References (6)