Radical behavior in fluorocarbon plasma and control of silicon oxide etching by injection of radicals

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 12 B, 1996, Pages 6347-6695

  Goto, Toshio ^a   Hori, Masaru ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CONTROL; FLUOROCARBONS; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS;

FLUOROCARBON PLASMA; INFRARED DIODE LASER ABSORPTION SPECTROSCOPY; LASER INDUCED FLUORESCENCE SPECTROSCOPY; RADICAL INJECTION TECHNIQUE; RADICALS; SILICON OXIDE ETCHING;

PLASMAS;

EID: 0030378267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Review

References (23)