In situ observation of oxidation and etching of silicon by ultra-high-vacuum transmission electron microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 12 B, 1996, Pages 6347-6695

  Ichihashi, Toshinari ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; OXIDATION; SURFACE STRUCTURE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

RECONSTRUCTED STRUCTURE; SURFACE REACTION;

SEMICONDUCTING SILICON;

EID: 0030378130     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Review

References (8)