TEM structural characterization of NM-scale islands in highly mismatched systems

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 383-388

  Ruvimov, S ^a   Liliental Weber, Z ^a   Ledentsov, N N ^a   Grundmann, M ^a   Bimberg, D ^a   Ustinov, V M ^a   Egorov, A Yu ^a   Kop'ev, P S ^a   Alferov, Zh I ^a   Scheerschmidt, K ^a   Gosele, U ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; DEPOSITION; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STABILITY; STRESS RELAXATION; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ARSENIC PRESSURE; EQUILIBRIUM DOT ARRAYS; GROWTH INTERRUPTION; HIGHLY MISMATCHED SYSTEMS; NANOMETER SCALE ISLANDS; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030377118     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-383     Document Type: Conference Paper

References (9)