Isotropical dry etching of silicon with high rate and planarized surface by using SF6 plasma

Hyomen Gijutsu/Journal of the Surface Finishing Society of Japan

Volumn 47, Issue 4, 1996, Pages 378-379

  Mineta, T ^a   Suganuma, E ^a  

^a YAMAGATA RESEARCH INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; PLASMA ETCHING; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SURFACE ROUGHNESS; SURFACES;

EXPERIMENTAL STUDY; INDUCTIVELY COUPLED PLASMA; KINETICS; OPERATING MODE;

SURFACE TREATMENT;

EID: 0030375008     PISSN: 09151869     EISSN: None     Source Type: Journal    
DOI: 10.4139/sfj.47.378     Document Type: Article

References (3)