Local environment symmetry of erbium impurity atoms in amorphous hydrogenated silicon

Technical Physics Letters

Volumn 22, Issue 12, 1996, Pages 960-961

  Masterov, V F ^a   Nasredinov, F S ^a   Seregin, P P ^a   Kudoyarova, V Kh ^a   Kuznetsov, A N ^a   Terukov, E I ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030372061     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Rare Earth Doped Semiconductors, edited by G. S. Pomrenke (Materials Research Society Symposium Proceedings, Vol. 301, 1993).
2. A. Polman, G. N. van den Hoven, J. S. Custer, J. H. Shin, R. Serna, and P. F. A. Alkemade, J. Appl. Phys. 77, 1256 (1995).
3. D. L. Adler, D. C. Jacobson, D. J. Eaglesham, M. A. Marcus, J. L. Benton, J. M. Poate, and P. H. Citrin, Appl. Phys. Lett. 61, 2181 (1992).
4. V. F. Masterov and L. G. Gerchikov, MRS Spring Meeting, 1996, Proc. Mat. Res. Soc. (in press).
5. M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, I. N. Yassievich, B. P. Zakharchenya, W. Fuhs, and A. Sturm, Appl. Phys. Lett. 67, 3599 (1995).
6. R. G. Barnes, R. L. Mossbauer, and E. Kankeleit, Phys. Rev. 136, A175 (1964).