Quantum confinement in GaAs microcrystallites embedded in SiO2 thin film

Chinese Physics Letters

Volumn 13, Issue 10, 1996, Pages 797-800

  Shi, Wang Zhou ^a   Lin, Kui Xun ^a   Lin, Xuan Ying ^a   Qi, Zhen Zhong ^b  

^a SHANTOU UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MAGNETRONS; QUANTUM CONFINEMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION EDGES; AVERAGE SIZE; BLUE SHIFT; CO-SPUTTERING TECHNIQUES; MICRO CRYSTALLITE; QUANTUM CONFINEMENT EFFECTS; SUBSTRATES TEMPERATURE; THIN-FILMS; X-RAY PHOTOELECTRON MICROSCOPY;

THIN FILMS;

EID: 0030371968     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/13/10/023     Document Type: Article

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