Annealing effects on surface morphology of Si(100)

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 650-653

  Lee, S M ^a   Lee, S H ^a   Sung, M M ^a   Marton, D ^a   Perry, S S ^a   Rabalais, J W ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DISSOLUTION; EVAPORATION; MORPHOLOGY; PYROMETERS; SILICON CARBIDE; SURFACE ROUGHNESS; THERMAL EFFECTS; ULTRASONIC CLEANING;

ULTRAHIGH VOLTAGE (UHV) DEPOSITION CHAMBERS;

SILICON WAFERS;

EID: 0030371030     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)