Effects of base dopant outdiffusion on low frequency noise characteristics of AlGaAs/GaAs heterojunction bipolar transistors

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 361-366

  Chou, Y C ^a   Li, G P ^a   Wu, C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BERYLLIUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

BASE DOPANT REDISTRIBUTION EFFECT; FORWARD CURRENT STRESS; LOW FREQUENCY NOISE CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030370504     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-361     Document Type: Conference Paper

References (13)