Effect of end of range loops on transient enhanced diffusion in Si

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 618-621

  Jones, K S ^a   Moller, K ^a   Chen, J ^a   Puga Lambers, M ^a   Law, M ^a   Simons, D S ^a   Chi, P ^a   Freer, B ^a   Bernstein, J ^a   Rubin, L ^a   Simonton, R ^a   Elliman, R G ^a   Petravic, M ^a   Kringhoj, P ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

LOOP DENSITY; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0030370194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)