Ion beam synthesis of SiC in silicon-on-insulator

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 709-712

  Koegler, R ^a   Reuther, H ^a   Voelskow, M ^a   Skorupa, W ^a   Romano Rodriguez, A ^a   Perez Rodriguez, A ^a   Serre, C ^a   Calvo Barrio, L ^a   Morante, J R ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; INTERFACES (MATERIALS); ION BEAMS; SILICON ON INSULATOR TECHNOLOGY; SYNTHESIS (CHEMICAL);

BURIED OXIDE LAYER; ION BEAM SYNTHESIS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030368219     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)