Performances evaluation of PbTiO3 gated metal/insulator/semiconductor switch diode for room-temperature high sensitivity infrared sensor

Ferroelectrics

Volumn 182, Issue 1-4, 1996, Pages 19-28

  Chen, F Y ^a   Fang, Y K ^a   Shu, C Y ^a   Chen, Jiann Ruey ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC MATERIALS; INFRARED RADIATION; LEAD COMPOUNDS; PERFORMANCE; SEMICONDUCTOR SWITCHES; SENSORS; THIN FILMS;

HIGH SENSITIVITY INFRARED SENSOR; INFRARED LIGHT POWER; LEAD TITANATE GATED METAL INSULATOR SEMICONDUCTOR SWITCH DIODE; OPERATIONAL MECHANISMS; SWITCHING VOLTAGE;

SEMICONDUCTOR DIODES;

EID: 0030367953     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199608216157     Document Type: Article

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