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Volumn 438, Issue , 1996, Pages 477-482
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Violet luminescence from Ge+-implanted SiO2 film on Si substrate
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
FILM GROWTH;
GERMANIUM;
ION IMPLANTATION;
LIGHT EMISSION;
LOW TEMPERATURE EFFECTS;
PHASE TRANSITIONS;
PHOTOLUMINESCENCE;
QUANTUM THEORY;
SEMICONDUCTING SILICON;
SILICA;
QUANTUM CONFINEMENT EFFECT;
THERMAL ANNEALING;
ULTRAVIOLET EXCITATION;
VIOLET LUMINESCENCE;
SEMICONDUCTING FILMS;
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EID: 0030364371
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-438-477 Document Type: Conference Paper |
Times cited : (9)
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References (13)
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