Transient enhanced diffusion of boron in silicon: the interstitial flux

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 15-20

  Simpson, T W ^a   Goldberg, R D ^a   Mitchell, I V ^a   Baribeau, J M ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

HIGH TEMPERATURE EFFUSION CELL; SILICON INTERSTITIALS; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0030362012     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-15     Document Type: Conference Paper

References (11)