Response of 100% internal quantum efficiency silicon photodiodes to 200 eV to 40 keV electrons

IEEE Nuclear Science Symposium & Medical Imaging Conference

Volumn 1, Issue , 1996, Pages 608-613

  Funsten, H O ^a   Suszcynsky, D M ^a   Ritzau, S M ^a   Korde, R ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; ELECTRON SCATTERING; MONTE CARLO METHODS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICA;

ELECTRON HOLE PAIR CREATION; SILICON PHOTODIODES;

PHOTODIODES;

EID: 0030360699     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)