Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 389-394

  Huang, T F ^a   Tuncel, E ^a   Yeo, J S ^a   Harris Jr , J S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; LASERS; LIGHT TRANSMISSION; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; ZINC OXIDE;

BUFFER LAYER; FULL WIDTH HALF MAXIMUM; LATTICE MISMATCH; OPTIMUM GROWTH CONDITION; PULSED LASER DEPOSITION;

FILM GROWTH;

EID: 0030357676     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-389     Document Type: Conference Paper

References (8)