Electron cyclotron resonance etching of SiC in SF6/O2 and NF3/O2 plasmas

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 251-255

  Ren, F ^a   Grow, J M ^a   Bhaskaran, M ^a   Lee, J W ^a   Vartuli, C B ^a   Lothian, J R ^a   Flemish, J R ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; FLUORINE COMPOUNDS; LIGHT EMISSION; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; SURFACE ROUGHNESS;

DILUTION; FREE RADICAL DENSITIES; PLASMA CHEMISTRY; ROOT MEAN SQUARE ROUGHNESS;

PLASMA ETCHING;

EID: 0030357402     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-251     Document Type: Conference Paper

References (8)