Characterization of MOCVD Pt electrode for ferroelectric thin films

Integrated Ferroelectrics

Volumn 13, Issue 1-3, 1996, Pages 79-86

  Lee, Jong Myeong ^a   Hwang, Cheol Seong ^b   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

LPMOCVD; Platinum; Thin film; Top electrode; ULSI DRAM

Indexed keywords

ADHESION; DIELECTRIC FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; FERROELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; RANDOM ACCESS STORAGE; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; VLSI CIRCUITS;

DEPOSITION TEMPERATURE; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION (LPMOCVD);

THIN FILMS;

EID: 0030354624     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589608013082     Document Type: Article

References (10)

1. Hartley, F. R. Chemistry of the Platinum Group Metals (Elsevier, New York, 1991). Chap. 1.
2. Hwang, C. S., Park, S. O., Kang, C. S., Cho, H-J., Kang, H-K., Ahn, S. T. and Lee, M. Y. (1995). Jpn. J. Appl. Phys., 34, 5178.
3. Rand, M. J. (1973). J. Electrochem. Soc., 120, 686.
4. Kwak, B. S., First, P. N., Erbil, A., Wilkens, B. J., Budai, J. D., Chisholm, M. F. and Boatner, L. A. (1992). J. Appl. Phys., 7, 3735.
5. Chen, Y. J., Kaesz, H. D., Thridandam, H. and Hicks, R. F. (1988). Appl. Phys. Lett., 53, 1591.
6. Xue, Z., Strouse, M. J., Shuh, D. K., Knobler, C. B., Kaesz, H. D., Hicks, R. F. and Williams, R. S. (1982). J. Am. Chems. Soc., 111, 8779.
7. Lecohier, B., Philippoz, J.-M. and Van den Bergh, B. (1992). J. Vac. Sci. Technol., 10,262.
8. Strem Chemicals Inc., Catalog No 16, 197 (1995).
9. Sommerfelt, S. R., Kotecki, D., Kingon, A. and Alshareef, H. N. (1995). Proc. Mater. Res. Soc., 361, 257.
10. Lee, J. M., Hwang, C. S., Cho, H.-J. and Kim, H. J., J. Vac. Sci. Technol., submitted.