Surface passivation of III-V compound semiconductors

Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 1996, Pages 275-282

  Kapila, A ^a   Malhotra, V ^a  

^a UNIVERSITY OF HAWAII   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR PLASMAS; SILICON NITRIDE; SOLUTIONS;

INTERFACIAL DEFECT DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030353927     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)