Determination of memory life of a molecular hysteresis molecule by thin layer CV

Chemistry Letters

Volumn , Issue 11, 1996, Pages 981-982

  Tomita, Atsuko ^a   Sano, Mitsuru ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030351675     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.1996.981     Document Type: Article

References (8)

1. M. Sano and H. Taube, J. Am. Chem. Soc., 113, 2327 (1991).
2. M. Sano, Kagaku Asahi., 51 (9), 34 (1991).
3. M. Sano and H. Taube, Inorg. Chem., 33, 705 (1994).
4. M. Sano, Poly. Adv. Tech., 6, 178 (1994).
5. P. Kissinger and W. R. Heineman, Laboratory Techniques in Electroanalytical Chemistry, (Marcel Dekker, New York (1984), p106.
6. All manipulation was carried out under argon atmosphere in a Vacuum/Atmospheres Co. glovebox.
7. Digital simulations of proposed electrochemical mechanisms were done with a program designed to simulate thin layer cyclic voltammograms. We assumed Nemstian behavior in this simulation.
8. The same spectra were obtained in the concentrations from 0.38 mM to 7.0 mM of the complex.