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Volumn 438, Issue , 1996, Pages 223-228
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Germanium redistribution phenomena in the synthesis of SiGe layers
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ATOMS;
CRYSTAL LATTICES;
DIFFUSION;
ION IMPLANTATION;
POINT DEFECTS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GERMANIUM;
DEBYE MODEL;
DYNAMIC ANNEALING RELATED DIFFUSION;
LATTICE ATOM;
ROOT MEAN SQUARE DEVIATION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0030349287
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-438-223 Document Type: Conference Paper |
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Times cited : (2)
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References (15)
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