Some computer simulations of semiconductor thin film growth and strain relaxation in a unified atomistic and kinetic model

Materials Research Society Symposium - Proceedings

Volumn 408, Issue , 1996, Pages 413-425

  Madhukar, A ^a   Yu, W ^a   Viswanathan, R ^a   Chen, P ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); KINETIC THEORY; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN; SURFACES; THIN FILMS;

ATOMISTIC MODEL; SCANNING PROBE MICROSCOPY; STRAIN RELAXATION;

SEMICONDUCTOR GROWTH;

EID: 0030315931     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)