Simplified 2-D model of current filamentation in low temperature breakdown regime of semiconductors

Acta Technica CSAV (Ceskoslovensk Akademie Ved)

Volumn 41, Issue 5, 1996, Pages 553-567

  Novák, Vít ^a   Hirschinger, Jürgen ^b   Eberle, Werner ^b   Wimmer, Christian ^b   Prettl, Wilhelm ^b  

^a INSTITUTE OF MATHEMATICS   (Czech Republic)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

2 D model; Avalanche breakdown; Bistability; Current filament; Impact ionization

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; IONIZATION OF SOLIDS; LOW TEMPERATURE PROPERTIES; MATHEMATICAL MODELS;

AVALANCHE BREAKDOWN; CURRENT FILAMENTS; IMPACT IONIZATION;

SEMICONDUCTOR MATERIALS;

EID: 0030315604     PISSN: 00017043     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (27)

1. MAYER K.M., GROSS R., PARISI J., PEINKE J., HUEBENER R.P.: Spatially Resolved Observation of Current Filament Dynamics in Semiconductor. Solid State Comm. 63, pp.55-59 (1987).
2. BRANDL A., VOELCKER M., PRETTL W.: Reconstruction of the spatial structure of current filaments in n-GaAs in a magnetic field. Appl. Phys. Lett. 55, pp. 238-240 (1989).
3. BRANDL A., PRETTL W.: Chaotic Fluctuations and Formation of a Current Filament in n-type GaAs. Phys Rev Lett. 66, pp. 3044-3047 (1991).
4. BRANDL A., PRETTL W.: Current Filaments and Nonlinear Oscillations in n-GaAs. Festkoerperprobleme 30, pp. 371-385 (1990).
5. AOKI K., RAU U., PEINKE J., PARISI J., HUEBENER R.P.: Observation of a Large-Scale Skeetlike Current Filament in a Thin n-GaAs Layer. Journal of the Physical Society of Japan 59, pp. 420-423 (1990).
6. HUEBENER R.P.: Self-Organized Structures of the Electronics Transport in Semiconductors. Festkoerperprobleme 30, pp. 387-401 (1990).
7. PEINKE J., PARISI J., ROEHRICHT B., MAYER K.M., RAU U., CLAUSS W., HUEBENER R.P., JUNGWIRT G., PRETTL W.: Classification of Current Instabilities During Low-Temperature Breakdown in Germanium. Appl. Phys. A 48, pp .155-160 (1989).
8. SPANGLER J., FINGER B., WIMMER C., EBERLE W., PRETTL W.: Magnetic-field-induced lateral displacements of current filaments in n-GaAs. Semicond. Sci. Technol. 9. pp. 373-378 (1994).
9. KITTEL A, HIRSCH M, RICHTER R, CLAUSS W, RAU U, PEINKE J, PARISI J, HUEBENER R P.: An oscillation mechanism of semiconductor breakdown due to magnetic field induced transverse motion of current filaments. Semicond. Sci. Technol 7, pp. B486-B487 (1992).
10. KOSTIAL H., ASCHE M., HEY R., PLOOG K., KEHRER B., QUADE W., SCHÖLL E.: Low Temperature Breakdown and Current Filamentation in n-type GaAs with Homogeneous and Partially Ordered Si Doping. Semicond. Sci. Technol. 10, pp. 775-784 (1995).
11. SCHÖLL E.: Z. Phys. B-Condensed Matter 46, p. 23 (1982).
12. SCHÖLL E.: Z. Phys. B-Condensed Matter 48, p. 153 (1982).
13. SCHÖLL E.: Nonequilibrium Phase Transitions in Semiconductors. Springer, Berlin 1987
14. HÜPPER G., PYRAGAS K., SCHÖLL E . Complex dynamics of current filaments in the low-temperature impurity breakdown regime of semiconductors. Phys. Rev. B 47, pp. 15515-15522 (1993).
15. HÜPPER G., PYRAGAS K , SCHÖLL E.: Complex spatiotemporal dynamics of current filaments in crossed electric and magnetic fields. Phys. Rev. B 47, pp. 17633-17636 (1993).
16. HUEPPER G., SCHÖLL E.: Dynamic Hall Effect as a Mechanism for Self-Sustained Oscillations and Chaos in Semiconductors. Phys. Rev. Lett. 66, pp. 2372-2375 (1991).
17. PEINKE J., SCHMID D.B., ROEHRICHT B., PARISI J.: Positive and Negative Differential Resistance in Electrical Conductors. Z. Phys. B-Condensed Matter 66, pp. 65-73 (1987).
18. CHRISTEN T.: The Velocity of Current Filaments in Weak Magnetic Fields. Z. Naturforsch. 49a, pp. 847-850 (1994).
19. KEHRER B., QUADE W., SCHÖLL E.: Monte Carlo simulation of impact-ionization-induced breakdown and current filamentation in δ-doped GaAs. Phys. Rev. B 51, pp. 7725-7733 (1995).
20. GAA M., KUNZ R.E., SCHÖLL E., EBERLE W., HIRSCHINGER J., PRETTL W.: Dynamics of nascent current filaments in low temperature impurity breakdown. Semicond. Sci. Technol., to be published (1996).
21. NOVÁK V., PRETTL W.: Current Filamentation in Dipolar Electric Field. in Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices, ed. by F.-J. Niedernostheide (Springer, Berlin 1995), pp.144-167.
22. NOVÁK V., PRETTL W.: Impurity-breakdown-induced current filamentation in a dipolar electric field. Phys. Rev. B 52, pp. 9023-9030 (1995).
23. KOZHEVNIKOV M., ASHKINADZE B.M., COHEN E., ARZA RON: Self-oscillations at photoinduced impurity breakdown in GaAs. Phys. Rev. B 52, pp. 4855-4863 (1995).
24. QUADE W., HÜPPER G., SCHÓLL E.: Monte Carlo simulation of the nonequilibrium phase transition in p-type Ge at impurity breakdown. Phys. Rev. B 49, pp. 13408-13419 (1994-I).
25. Unpublished.
26. K. KÜPFMÜLLER: Einführung in die theoretische Elektrotechnik 10th ed. Springer, Berlin 1973.
27. EBERLE W., HIRSCHINGER J., MARGULL U., PRETTL W., NOVAK V., KOSTIAL H.: Visualization of current filaments in n-GaAs by photoluminescence quenching. Appl. Phys. Lett. 68, pp. 3329-3331 (1996).