Method of easily extracting resist development parameters for lithography simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2726, Issue , 1996, Pages 348-359

  Lucas, K D ^a   Ivin, V V ^a   Kudrja, V P ^a   Larin, D Yu ^a   Makhviladze, T M ^a   Medvedeva, M G ^a   Rogov, A A ^a   Verzunov, S V ^a   Yang, D C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED SOFTWARE ENGINEERING; COMPUTER SIMULATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SIMULATORS; TUNING;

RESIST DEVELOPMENT PARAMETERS;

PHOTORESISTS;

EID: 0030313081     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240987     Document Type: Conference Paper

References (5)