Focus and exposure dose determination using stepper alignment

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2726, Issue , 1996, Pages 799-808

  Dirksen, Peter ^a   Pellens, Ruud ^a   Juffermans, Casper ^a   Reuhman Huisken, Marian ^a   Van der Laan, Hans ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Alignment; Exposure dose; Focus; Latent image; Metrology; Optical lithography

Indexed keywords

FOCUSING; IMAGING TECHNIQUES; LENSES; OPTICAL RESOLVING POWER;

EXPOSURE DOSES; LATENT IMAGES;

PHOTOLITHOGRAPHY;

EID: 0030313020     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240941     Document Type: Conference Paper

References (9)

1. New focus metrology technique using special test mask
2. In-process image detection technique for determination of overlay, and image quality for ASML wafer steppers
3. Automatic laser scanning focus detection method using printed focus pattern
4. Latent image metrology for production wafer steppers
5. Phase gratings as waferstepper alignment marks for all process layers
6. Photoresist surface induction and its effect on swing behaviour
7. Resist thickness influence on depth of focus - A key question for advanced I-line and DUV lithography
8. Optical focus and level sensor for wafer steppers