Phase formations and ferroelectric properties of PLT thin films by MOCVD

Integrated Ferroelectrics

Volumn 12, Issue 2-4, 1996, Pages 83-92

  Lee, Seaung Suk ^a   Kim, Ho Gi ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Ferroelectric; MOCVD; PLT

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CURRENT DENSITY; FERROELECTRIC MATERIALS; FILM PREPARATION; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PERMITTIVITY; SURFACE STRUCTURE; THIN FILMS;

LEAD LANTHANUM TITANATE;

DIELECTRIC FILMS;

EID: 0030311892     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589608013051     Document Type: Article

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