Plasma immersion ion implantation reactor design considerations for oxide charging

Surface and Coatings Technology

Volumn 85, Issue 1-2, 1996, Pages 64-69

  En, W ^a   Linder, B P ^a   Cheung, N W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Oxide charging; Plasma immersion ion implantation; Wafer bias

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRIC CURRENTS; MATHEMATICAL MODELS; MOS DEVICES; PLASMA APPLICATIONS; PLASMA INTERACTIONS; PLASMA SIMULATION; WAVEFORM ANALYSIS;

CHARGING CURRENTS; ION DENSITY; METAL OXIDE SEMICONDUCTOR CAPACITOR; OXIDE CHARGING; PLASMA ELECTRON TEMPERATURE; PLASMA IMMERSION ION IMPLANTATION; SPICE MODEL; VOLTAGE PULSE WAVEFORM; WAFER BIAS;

ION IMPLANTATION;

EID: 0030296114     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/0257-8972(96)02882-4     Document Type: Article

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