The microstructure and properties of a buried AlN layer produced by nitrogen implantation into pure aluminum

Thin Solid Films

Volumn 289, Issue 1-2, 1996, Pages 17-21

  Lu, H L ^a,b   Sommer, W F ^a   Borden, M J ^a   Tesmer, J R ^a   Wu, X D ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b CHINA INSTITUTE OF ATOMIC ENERGY   (China)

Author keywords

Aluminium nitride; Ion implantation; Rutherford backscattering spectroscopy; X ray diffraction

Indexed keywords

CRYSTAL MICROSTRUCTURE; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

ALUMINIUM NITRIDE; BURIED LAYER; NITROGEN IMPLANTATION; TRANSMISSION ELECTRON DIFFRACTION;

ALUMINUM COMPOUNDS;

EID: 0030291480     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08872-4     Document Type: Article

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