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Journal of Applied Physics

Volumn 80, Issue 10, 1996, Pages 5821-5827

Kink effect on subthreshold current conduction mechanism for n-channel metal-oxide-silicon devices

(3) Chen, S S a Lin, S C a Kuo, J B a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

ANALYTICAL SUBTHRESHOLD CURRENT CONDUCTION MODEL; BODY EMITTER VOLTAGE; DIFFUSION CURRENT REGIME; DRIFT CURRENT REGIME; KINK EFFECT; METAL OXIDE SILICON DEVICES; SUBTHRESHOLD CURRENT CONDUCTION MECHANISM;

MOS DEVICES;

EID: 0030290938 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.363729 Document Type: Review

Times cited : (6)

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